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SSM9915H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G S D
BV DSS R DS(ON) ID
20V 50m 20A
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=125 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 20 10 20 16 41 26 0.2 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit /W /W
Rev.2.01 6/26/2003
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SSM9915H,J
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50
Max. Units 50 80 1 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125oC)
o
VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= 10V ID=10A VDS=20V VGS=5V VDS=10V ID=10A RG=3.3,VGS=5V RD=1 VGS=0V VDS=20V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V Tj=25, IS=20A, VGS=0V
Min. -
Typ. -
Max. Units 20 41 1.3 A A V
Pulsed Source Current ( Body Diode ) 1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/26/2003
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SSM9915H,J
50
40
T C =25 o C
40
V G =4.5V
30
T C =150 o C V G =4.5V
ID , Drain Current (A)
30
ID , Drain Current (A)
V G =3.5V
V G =3.5V
20
20
V G =2.5V
10
V G =2.5V
10
V G =1.5V
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5
V G =1.5V
6 7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.8
I D= 6 A T C =25 C Normalized R DS(ON)
50
I D =6A
1.6
o
V G =4.5V
1.4
RDSON (m )
1.2
40
1.0
0.8
30
0.6
1
2
3
4
5
6
-50
0
50
100
150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Rev.2.01 6/26/2003
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SSM9915H,J
25
60
50 20
ID , Drain Current (A)
40 15
PD (W)
10 5 0 25 50 75 100 125 150
30
20
10
0 0 50 100 150
T c , Case Temperature ( o C)
T c , Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
DUTY=0.5
100
Normalized Thermal Response (R thjc)
10us ID (A) 100us 1ms 10ms 100ms
1
0.2
10
0.1
0.1
0.05
0.02 SINGLE PULSE 0.01
PDM
t T
T c =25 o C Single Pulse
0.1 0.1 1 10 100
0.01 0.00001 0.0001 0.001 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.1
1
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Rev.2.01 6/26/2003
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SSM9915H,J
16
f=1.0MHz
1000
I D =20A
14
VGS , Gate to Source Voltage (V)
12
V DS =12V V DS =16V V DS =20V C (pF) Ciss Coss
100
10
8
6
Crss
4
2
0 0 2 4 6 8 10 12 14 16 18 20
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
1.2
10
0.95
T j =150 o C
VGS(th) (V)
T j =25 o C IS (A)
1
0.7
0.1
0.45
0.01 0 0.4 0.8 1.2 1.6
0.2 -50 0 50 100 150
V SD (V)
T j , Junction Temperature ( o C )
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
Rev.2.01 6/26/2003
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SSM9915H,J
RD
VDS 90%
D
VDS
TO THE OSCILLOSCOPE 0.5x RATED VDS
RG
G
+ 5v -
S VGS
10% VGS td(on) tr td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS TO THE OSCILLOSCOPE
QG 5V
D
G S
+
RATED VDS
QGS
QGD
VGS
1~ 3 mA
IG ID
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
Rev.2.01 6/26/2003
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